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irf1404spbf IRF1404LPBF hexfet ? power mosfet seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf1404l) is available for low- profile applications. s d g absolute maximum ratings thermal resistance v dss = 40v r ds(on) = 0.004 ? i d = 162a advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description 03/11/04 1 d 2 pak irf1404spbf to-262 IRF1404LPBF parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 162 i d @ t c = 100c continuous drain current, v gs @ 10v 115 a i dm pulsed drain current 650 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 519 mj i ar avalanche current 95 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to +175 t stg storage temperature range -55 to +175 soldering temperature, for 10 seconds 300 (1.6mm from case ) c parameter typ. max. units r jc junction-to-case ??? 0.75 c/w r ja junction-to-ambient (pcb mounted, steady-state) * ??? 40 pd -95104 www.kersemi.com

2 electrical characteristics @ t j = 25c (unless otherwise specified) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 95a, di/dt 150a/s, v dd v (br)dss , t j 175c starting t j = 25c, l = 0.12mh r g = 25 ? , i as = 95a. (see figure 12) pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curre nt integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 95a, v gs = 0v t rr reverse recovery time ??? 71 110 ns t j = 25c, i f = 95a q rr reverse recoverycharge ??? 180 270 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 162 650 c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.036 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.00350.004 ? v gs = 10v, i d = 95a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 106 ??? ??? s v ds = 25v, i d = 60a ??? ??? 20 a v ds = 40v, v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v q g total gate charge ??? 160 200 i d = 95a q gs gate-to-source charge ??? 35 ??? nc v ds = 32v q gd gate-to-drain ("miller") charge ??? 42 60 v gs = 10v t d(on) turn-on delay time ??? 17 ??? v dd = 20v t r rise time ??? 140 ??? i d = 95a t d(off) turn-off delay time ??? 72 ??? r g = 2.5 ? t f fall time ??? 26 ??? r d = 0.21 ? between lead, and center of die contact c iss input capacitance ??? 7360 ??? v gs = 0v c oss output capacitance ??? 1680 ??? v ds = 25v c rss reverse transfer capacitance ??? 240 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 6630 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 1490 ??? v gs = 0v, v ds = 32v, ? = 1.0mhz c oss eff. effective output capacitance ??? 1540 ??? v gs = 0v, v ds = 0v to 32v i dss drain-to-source leakage current nh 7.5 l s internal source inductance ??? ??? use irf1404 data and test conditions. * when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. www.kersemi.com

3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 159a www.kersemi.com

4 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 95a v = 20v ds v = 32v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms www.kersemi.com

5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 25 50 75 100 125 150 175 0 40 80 120 160 200 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.kersemi.com

6 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 0 20 40 60 80 100 i av , avalanche current ( a) 40 42 44 46 48 50 v d s a v , a v a l a n c h e v o l t a g e ( v ) 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 39a 67a 95a www.kersemi.com

7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets
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8 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f530s t h is is an ir f 530s wit h lot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" assembly lot code in t e r n at ional r e ct if ie r logo part number dat e code ye ar 0 = 2000 we ek 02 line l f 530s a = assembly site code week 02 p = des ignate s lead-free product (optional) rectifier in t e r n at ion al logo lot code as s e mb l y ye ar 0 = 2000 date code part number

dimensions are shown in millimeters (inches) www.kersemi.com

9 as s e mb l y lot code rectifier int ernat ional as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 e xamp l e : line c dat e code week 19 year 7 = 1997 part number part number logo lot code assembly int ernat ional rect ifier product (optional) p = des ignat es lead-f ree a = assembly site code we e k 19 ye ar 7 = 1997 dat e code or to-262 part marking information to-262 package outline igbt 1- gate 2- collector 3- emitter www.kersemi.com

10 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation dimensions are shown in millimeters (inches) www.kersemi.com

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